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| RFP2N20L Data Sheet July 1999 File Number 2875.2 2A, 200V, 3.500 Ohm, Logic Level, N-Channel Power MOSFET The RFP2N20L N-Channel enhancement mode silicon gate power field effect transistor is specifically designed for use with logic level (5V) driving sources in applications such as programmable controllers, automotive switching, and solenoid drivers. This performance is accomplished through a special gate oxide design which provides full rated conduction at gate biases in the 3V - 5V range, thereby facilitating true on-off power control directly from logic circuit supply voltages. Formerly developmental type TA09532. Features * 2A, 200V * rDS(ON) = 3.500 * Design Optimized for 5V Gate Drives * Can be Driven Directly from QMOS, NMOS, TTL Circuits * Compatible with Automotive Drive Requirements * SOA is Power Dissipation Limited * Nanosecond Switching Speeds * Linear Transfer Characteristics * High Input Impedance Ordering Information PART NUMBER RFP2N20L PACKAGE TO-220AB BRAND RFP2N20L * Majority Carrier Device * Related Literature - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards" NOTE: When ordering, include the entire part number. Symbol D G S Packaging JEDEC TO-220AB SOURCE DRAIN GATE DRAIN (FLANGE) 6-256 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright (c) Intersil Corporation 1999 RFP2N20L Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified RFP2N20L Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS Drain to Gate Voltage RGS = 20K (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDGR Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Drain Current, RMS Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID Pulsed (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Derate Linearly Above TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg 200 200 10 2 4 25 0.2 -55 to 150 300 260 UNITS V V V A A W W/ oC oC oC oC CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 125oC. Electrical Specifications PARAMETER TC = 25oC, Unless Otherwise Specified SYMBOL BVDSS VGS(TH) IDSS TEST CONDITIONS ID = 250A, VGS = 0V VGS = VDS, ID = 250A VDS = Rated BVDSS, VGS = 0V VDS = 0.8 x Rated BVDSS, VGS = 0V, TC = 125oC MIN 200 1 VGS = 0V, VDS = 25V, f = 1MHz (Figure 9) TYP 10 10 25 20 MAX 2 1 25 100 7 3.500 25 30 40 25 200 60 35 5 UNITS V V A A nA V ns ns ns ns pF pF pF oC/W Drain to Source Breakdown Voltage Gate to Threshold Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current Drain to Source On Voltage (Note 2) Drain to Source On Resistance (Note 2) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Thermal Resistance Junction to Case IGSS VDS(ON) rDS(ON) td(ON) tr td(OFF) tf CISS COSS CRSS RJC VGS = 10V, VDS = 0 ID = 2A, VGS = 5V ID = 2A, VGS = 5V (Figures 6, 7) ID = 2A, VDD = 100V, RG = 6.25, VGS = 5V RL = 50 (Figures 10, 11, 12) Source to Drain Diode Specifications PARAMETER Source to Drain Diode Voltage (Note 2) Reverse Recovery Time NOTES: 2. Pulsed: pulse duration = 300s max, duty cycle = 2%. 3. Repetitive rating: pulse width limited by maximum junction temperature. SYMBOL VSD trr ISD = 2A ISD = 2A, dlSD/dt = 50A/s TEST CONDITIONS MIN TYP 200 MAX 1.4 UNITS V ns 6-257 RFP2N20L Typical Performance Curves 1.2 POWER DISSIPATION MULTIPLIER Unless Otherwise Specified 2.4 2.2 ID, DRAIN CURRENT (A) 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 25 1.0 0.8 0.6 0.4 0.2 0 0 25 50 75 100 125 TC, CASE TEMPERATURE (oC) 150 50 75 100 125 TC, CASE TEMPERATURE (oC) 150 FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE 10 OPERATION IN THIS AREA LIMITED BY rDS(ON) ID, DRAIN CURRENT (A) 1 TJ = MAX RATED TC = 25oC ID, DRAIN CURRENT (A) 3 2.5 2 1.5 1 0.5 0.01 0 0 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX TC = 25oC VGS = 5V VGS = 10V VGS = 4V VGS = 3V 0.1 VGS = 2V 1 2 3 4 5 6 VDS, DRAIN TO SOURCE VOLTAGE (V) 7 1 10 100 1000 VDS, DRAIN TO SOURCE VOLTAGE (V) FIGURE 3. FORWARD BIAS SAFE OPERATING AREA FIGURE 4. SATURATION CHARACTERISTICS IDS(ON), DRAIN TO SOURCE CURRENT (A) 4 3 25oC rDS(ON), DRAIN TO SOURCE ON RESISTANCE () PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX VDS = 15V -40oC 5 4 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX VGS = 5V 125oC 3 25oC 2 -40oC 1 2 125oC 1 125oC -40oC 0 0 1 2 3 4 VGS, GATE TO SOURCE VOLTAGE (V) 5 0 0 1 2 ID, DRAIN CURRENT (A) 3 4 FIGURE 5. TRANSFER CHARACTERISTICS FIGURE 6. DRAIN TO SOURCE ON RESISTANCE vs DRAIN CURRENT 6-258 RFP2N20L Typical Performance Curves 2.0 ID = 2A VGS = 5V NORMALIZED GATE THRESHOLD VOLTAGE Unless Otherwise Specified (Continued) 2.0 ID = 250A NORMALIZED DRAIN TO SOURCE ON RESISTANCE 1.5 1.5 1.0 1.0 0.5 0.5 -50 0 50 100 TJ, JUNCTION TEMPERATURE (oC) 150 0 50 0 50 100 150 TJ, JUNCTION TEMPERATURE (oC) 200 FIGURE 7. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE VDS, DRAIN TO SOURCE VOLTSAGE (V) 180 CISS FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE 200 RL = 100 IG(REF) = 0.09mA VGS = 5V GATE SOURCE VDD = BVDSS VOLTAGE VDD = BVDSS 10 VGS, GATE TO SOURCE VOLTAGE (V) C, CAPACITANCE (pF) 140 8 150 100 60 VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS CDS + CGD COSS 6 100 4 50 0.75BVDSS 0.50BVDSS 0.25BVDSS DRAIN SOURCEVOLTAGE 0 0 I 20 G(REF) IG(ACT) t, TIME (s) I 80 G(REF) IG(ACT) 20 0 0 10 20 30 40 VDS, DRAIN TO SOURCE VOLTAGE (V) CRSS 50 2 NOTE: Refer to Intersil Applications Notes AN7254 and AN7260 FIGURE 9. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE FIGURE 10. NORMALIZED SWITCHING WAVEFORMS FOR CONSTANT GATE CURRENT Test Circuits and Waveforms tON td(ON) tr RL VDS + tOFF td(OFF) tf 90% 90% RG DUT - VDD 0 10% 90% 10% VGS VGS 0 10% 50% PULSE WIDTH 50% FIGURE 11. SWITCHING TIME TEST CIRCUIT FIGURE 12. RESISTIVE SWITCHING WAVEFORMS 6-259 RFP2N20L All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site http://www.intersil.com Sales Office Headquarters NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (407) 724-7000 FAX: (407) 724-7240 EUROPE Intersil SA Mercure Center 100, Rue de la Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05 ASIA Intersil (Taiwan) Ltd. 7F-6, No. 101 Fu Hsing North Road Taipei, Taiwan Republic of China TEL: (886) 2 2716 9310 FAX: (886) 2 2715 3029 6-260 |
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